DAC EB FIB DAC(Digital to Analog Convertor), EB(Electron Beam), FIB(Focused Ion Beam)


Having continued to grow as a manufacturer of weighing and measuring instruments, A&D is now going further with active challenges to up-and-coming businesses using unique technological skills accumulated over almost three decades.
In recent years, A&D has especially focused on A/D and D/A conversion devices and electron beam businesses supporting semiconductor development.

Offering Miniaturization Technologies for Semiconductor Processing and Controlling

DACSemiconductor integrated circuits such as microprocessors and computer memories are constantly required to offer more capacity and to achieve further miniaturization. For this reason, light source used in lithography is shifting toward an electron beam radiated from an electron gun with a shorter wavelength than that of the common laser beam. A&D started developing electron guns early on and successfully developed those offering top of the range high voltage output and excellent stability operation rate. In addition, this technology has prospects for use in DVD mastering and is currently used with ion guns for surface analysis.
Furthermore, A&D has the advantage having developed peripheral circuitries to control electron beam. The A/D and D/A conversion technologies that A&D is extremely proud of are currently applied to ultra high-speed, highly accurate D/A converters (DAC) for beam deflection circuits to control the direction of electron beam radiation. A&D's blanking circuits for controlling beam radiation intervals and lens aligner for controlling beam diameter, etc. are also highly recommended by professionals in the industry.

DAC Business

DAC requirements are becoming tougher and tougher due to ongoing competition in the miniaturization of semiconductors. An example of this is A&D's ±320V output with 20-bit accuracy at 10µS stabilization time. The contradicting factors of accuracy and speed are a major issue because the positioning error of an electron beam affects pattern writing accuracy but high-speed performance is required to increase throughput.

A) Main deflection amplifier Specifications

Model AD-199-5
Model AD-199-5

Output voltage ±400V max
Settling Time 60 µS (Full Swing)
Resolution 18-bit
Linearity ±1/2LSB (17-bit)
Temperature Coefficient < ±8ppm/2°C, 1 hr
Noise < ±1LSB

B) Sub deflection amplifier Specifications

Model AD-199-3
Model AD-199-3

Output voltage ±37.5V max. (POS, NEG)
Settling Time 50 nS less
Resolution 12-bit
Linearity ±1/2LSB (12-bit)
Temperature Coefficient < ±100ppm/2°C, 1 hr
Noise < ±1LSB
Permissible Load < 30 PF
Output Offset Within ±3.2% of FS

C) Lens and Aligner Specifications

Lens out : 4 ch

Output Current ±2 A
Stability < ±1ppm

Lens out : 4 ch

Output Current ±2 A
Stability < ±10ppm

EBL(Electron Beam Lithography) Column Business

A&D provides the key component unit of a 50 kV electron beam column, with high-voltage unit and column control units, developed to meet the standards of ultra-high accuracy for MASK /RETICLES fabrication. Electron Beam Llithography offers higher patterning resolution with the shorter wavelength possessed by its 50 kV electrons.

50 kV EBL column Specifications

50 kV EBL column

Accelerating voltage 50kV
Column 3-lens EOS
Electron gun emitter ZrO/W (Schottky)
Electron beam diameter <[email protected]

100kV ZrO/W schottky column for EB writer Specifications

PDF Brochure (PDF 846KB)

100kV ZrO/W schottky column

Accelerating voltage 100kV
Focusing system 3 lens optics
Emitter ZrO/W schottky
Beam shape Gaussian spot beam
Beam diameter <5nm @10nA (*1)
Beam current up to 100nA
(*1) defined by Beametr TM method

SE image of Sn on C sample with 30nA, 100kV, FoV=0.5μm
SE image of Sn on C sample with 30nA, 100kV, FoV=0.5μm

Beam diameter examination
Beam diameter examination by Beametr TM with 100kV, 30nA
Beam diameter =< 5nm (@30nA)
Beametr is a trademark of aBeam technologies Inc.

FIB Column Business

The Focused Ion Beam (FIB) system responds to various needs, ranging from high-resolution observation and processing of various materials to fabrication of various types of samples.
Focused Ion Beam technology makes it possible to locally sputter materials by milling a sample surface with highly focused gallium ions.
FIB systems are widely utilized for:

  • One chip circuit modification
  • Defect characterization (TEM/SEM sample preparation)
  • Micro machining
  • Secondary Ionization Mass Spectrometer (SIMS)

30kV Focused Ion Beam column for micromachining Specifications

PDF Brochure (PDF 438KB)

30kV Focused Ion Beam column
External View

Acceleration voltage 5-30kV
Focusing system 2 lens optics
Emitter Ga room temp. LMIS
Beam shape Gaussian spot beam
Image resolution <4nm @WD=22mm
Au/C sample
Beam current 0.1pA to 20nA
High Voltage power supply for FIB, LMIS operation
Column control electronics and Imaging control units

Operation GUI (Windows)
Operation GUI (Windows)

Standard column configuration
Standard column configuration

Schematic diagram of an FIB and controllers
Schematic diagram of an FIB and controllers

Column performance examination
Column performance examination
Imaging test with 30keV, 10keV and 5keV @Ga
Sputterring test with various beam current @30keV, Ga

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